Numerical simulation of liquid phase electro-epitaxial selective area growth
- Author
- KHENNER, M1 ; BRAUN, R. J2
[1] Department of Mathematics, State University of New York at Buffalo, Buffalo, NY 14260-2900, United States
[2] Department of Mathematical Sciences, University of Delaware, Newark, DE 19716, United States - Source
Journal of crystal growth. 2005, Vol 279, Num 1-2, pp 213-228, 16 p ; ref : 33 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 68.55.Jk 81.10.Aj 81.15.Aa 81.15.Lm A1. Computer simulation A1. Crystal Morphology A1. Growth models A3. Liquid phase epitaxy A3. Selective epitaxy B2. Semiconducting materials
- Keyword (fr)
- Angle contact Composé binaire Condition aux limites Conductivité électrique Croissance cristalline Electrodiffusion Epitaxie phase liquide Etude théorique Gallium arséniure Interface Mouillage Méthode différence finie Méthode phase liquide Semiconducteur III-V Simulation numérique Taux croissance As Ga GaAs Composé minéral
- Keyword (en)
- Contact angle Binary compounds Boundary conditions Electrical conductivity Crystal growth Electrodiffusion LPE Theoretical study Gallium arsenides Interfaces Wetting Finite difference method Growth from liquid III-V semiconductors Digital simulation Growth rate Inorganic compounds
- Keyword (es)
- Método fase líquida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30Q Electromigration
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10D Growth from solutions
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16768396
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2005.01.110 
https://dx.doi.org/10.1016/j.jcrysgro.2005.01.110
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