Surface reaction kinetics of metal p-diketonate precursors with O radicals in radical-enhanced atomic layer deposition of metal oxides
- Author
- VAN, Trinh T1 ; CHANG, Jane P1
[1] Department of Chemical Engineering, University of California, Los Angeles, 5532-D Boelter Hall, UCLA, Los Angeles, CA 90095, United States - Source
Applied surface science. 2005, Vol 246, Num 1-3, pp 250-261, 12 p ; ref : 44 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 81.15 (thin film-deposition methods) 82.20 (chemical kinetics) 82.30 (chemical reactions) 82.65.J (surface reaction) ALD Atomic layer deposition O radicals P-Diketonate Thin film
- Keyword (fr)
- Cinétique réaction Couche mince Désorption Effet température Energie activation Erbium oxyde In situ Isotherme adsorption Méthode ALE Précurseur Réaction surface Yttrium oxyde Er2O3 O Y Y2O3 Composé minéral Lanthanide composé Métal transition composé
- Keyword (en)
- Reaction kinetics Thin film Desorption Temperature effect Activation energy Erbium oxides In situ Adsorption isotherm Atomic layer epitaxial growth Precursor Surface reaction Yttrium oxide Inorganic compound Lanthanide compound Transition element compounds
- Keyword (es)
- Capa fina Desorción Efecto temperatura Energía activación In situ Isotermo adsorción Precursor Reacción superficie Ytrio óxido Compuesto inorgánico Lantánido compuesto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01A Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry / 001C01A02 Theory of reactions, general kinetics
- Discipline
- General chemistry and physical chemistry Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16768544
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.apsusc.2004.11.025 
https://dx.doi.org/10.1016/j.apsusc.2004.11.025
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