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Analysis of GaN cleaning procedures

Autor
DIALE, M1 ; AURET, F. D1 ; VAN DER BERG, N. G1 ; ODENDAAL, R. Q1 ; ROOS, W. D2
[1] University of Pretoria, Department of Physics, Lynnwood Road, Pretoria 0001, South Africa
[2] University of Free State, Bloemfontein, South Africa
Fuente

Applied surface science. 2005, Vol 246, Num 1-3, pp 279-289, 11 p ; ref : 17 ref

ISSN
0169-4332
Campo Científico
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Editor
Elsevier Science, Amsterdam
País de la publicación
Netherlands
Tipo de documento
Article
Idioma
English
Palabra clave de autor
73.61 Cleaning GaN Morphology Wet chemical
Palabra clave (fr)
Gallium nitrure Microscopie force atomique Nettoyage surface Rugosité Semiconducteur Spectrométrie Auger Structure surface Traitement surface Ga N GaN Composé minéral
Palabra clave (in)
Gallium nitrides Atomic force microscopy Surface cleaning Roughness Semiconductor materials AES Surface structure Surface treatments Inorganic compounds
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments

Pacs
6835B Surface structure and topography

Pacs
8165C Surface cleaning, etching, patterning

Disciplina
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
16768547

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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