Diamond synthesis on silicon nitride by the hot filament chemical vapor deposition technique
- Author
- POLINI, R1 ; MATTEI, G2 ; MARUCCI, A2 ; TRAVERSA, E1
[1] Università di Roma Tor Vergata Dipartimento di Scienze e Tecnologie Chimiche, Via della Ricerca Scientifica, 00133, Roma, Italy
[2] Istituto di Metodologie Avanzate Inorganiche del CNR-P.O. Box 10, 00016, Monterotondo Stazione, Roma, Italy - Source
Nippon seramikkusu kyokai gakujutsu ronbunshi. = Journal of the Ceramic Society of Japan (1988). 1998, Vol 106, Num 12, pp 1167-1171 ; ref : 23 ref
- CODEN
- YGKSA4
- ISSN
- 0914-5400
- Scientific domain
- Chemical industry parachemical industry
- Publisher
- Nippon seramikkusu kyokai, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche épaisse Croissance cristalline en phase vapeur Diamant Dépôt chimique phase vapeur Etude expérimentale Fil chaud Germination cristalline Germination hétérogène SEM Spectre Raman Texture C Substrat Si3N4 Non métal
- Keyword (en)
- Thick films Crystal growth from vapors Diamonds CVD Experimental study Hot wire Crystal nucleation Heterogeneous nucleation SEM Raman spectra Texture Nonmetals
- Keyword (es)
- Hilo caliente Germinación cristalina Germinación heterogénea
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1677416
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.2109/jcersj.106.1167 
https://dx.doi.org/10.2109/jcersj.106.1167
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