Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islands
- Author
- HAO WANG1 ; GUCHENG ZENG2 ; ZHIJUN SONG3 ; YANGZHE WU2 ; CHANGJUN LIAO1 ; XUEYI LE3 ; JIYE CAI2 ; SONGHAO LIU1
[1] School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510631, China
[2] Department of Chemistry, Jinan University, Guangzhou 510632, China
[3] College of Science, South China Agricultural University, Guangzhou 510642, China - Source
Journal of crystal growth. 2005, Vol 279, Num 3-4, pp 241-247, 7 p ; ref : 29 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 42.55.Sa A1. CrystA1 structure 68.55.Ac 68.55.Nq 81.07.Ta 81.15.Gh 81.16.Dn A1. Stress A3. MetA1organic chemicA1 vapor deposition A3. Quantum dot B2. Semiconducting indium phosphide
- Keyword (fr)
- Autoorganisation Composé binaire Couche tampon Dislocation Effet contrainte Etude expérimentale Indium phosphure Microscopie force atomique Morphologie Orientation cristalline Semiconducteur III-V Structure îlot In P InP Substrat GaAs Composé minéral
- Keyword (en)
- Self organization Binary compounds Buffer layer Dislocations Stress effects Experimental study Indium phosphides Atomic force microscopy Morphology Crystal orientation III-V semiconductors Island structure Inorganic compounds
- Keyword (es)
- Autoorganización Capa tampón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16795304
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2005.02.049 
https://dx.doi.org/10.1016/j.jcrysgro.2005.02.049
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