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Analysis of the parasitic S/D resistance in multiple-gate FETs

Author
DIXIT, Abhisek1 2 ; KOTTANTHARAYIL, Anil1 ; COLLAERT, Nadine1 ; GOODWIN, Mike3 ; JURCZAK, Malgorzata1 ; DE MEYER, Kristin1
[1] Inter-University Microelectronics Center (IMEC) Leuven, Leuven 3001, Belgium
[2] Department of Electrical Engineering (ESAT), Katholieke Universiteit Leuven (KUL), Leuven 3001, Belgium
[3] Texas Instruments Inc, Dallas, 75243 TX, United States
Source

I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 6, pp 1132-1140, 9 p ; ref : 27 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
(110) transport Analytical model Fin field-effect transistors (FinFETs) fully depleted series resistance silicon epitaxy silicon-on-insulator (SOI) MOSFET small geometry source/drain (S/D)
Keyword (fr)
Croissance sélective Dispositif expérimental Epitaxie Modèle 3 dimensions Méthode analytique Résistance contact Résistance parasite Résistance série Technologie MOS complémentaire Technologie autoalignée Technologie silicium sur isolant Transistor MOSFET Transistor effet champ Transistor grille double
Keyword (en)
Selective growth Experimental device Epitaxy Three dimensional model Analytical method Contact resistance Parasitic resistance Series resistance Complementary MOS technology Self aligned technology Silicon on insulator technology MOSFET Field effect transistor Dual gate transistor
Keyword (es)
Dispositivo experimental Epitaxia Modelo 3 dimensiones Método analítico Resistencia contacto Resistencia parásita Resistencia en serie Tecnología MOS complementario Tecnología rejilla autoalineada Tecnología silicio sobre aislante Transistor efecto campo Transistor de compuerta doble
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16809808

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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