Order-driven contribution to the planar hall effect in Fe3Si thin films
- Author
- BOWEN, M1 ; FRIEDLAND, K.-J1 ; HERFORT, J1 ; SCHONHERR, H.-P1 ; PLOOG, K. H1
[1] Paul Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin, Germany - Source
Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 17, pp 172401.1-172401.4 ; ref : 23 ref
- ISSN
- 1098-0121
- Scientific domain
- Metallurgy, welding; Condensed state physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alliage Heusler Anisotropie Anomalie Couche mince Effet Hall Fer alliage Magnétorésistance Métal transition alliage Ordre magnétique Relation ordre Silicium alliage Sous réseau 7350J
- Keyword (en)
- Heusler alloys Anisotropy Anomaly Thin films Hall effect Iron alloys Magnetoresistance Transition element alloys Magnetic ordering Ordering Silicon alloys Sublattices
- Keyword (es)
- Anomalía Relación orden
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures / 001B70C50J Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16877580
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.71.172401 
https://dx.doi.org/10.1103/PhysRevB.71.172401
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