Pulsed laser deposition of epitaxial Al-doped ZnO film on sapphire with GaN buffer layer
- Author
- KUMAR, Manoj1 ; MEHRA, R. M1 ; WAKAHARA, Akihiro2 ; ISHIDA, M2 ; YOSHIDA, Akira2
[1] Department of Electronic Science, University of Delhi South Campus, New Delhi 110021, India
[2] Toyohashi University of Technology, Tempaku-cho, Hibariga-oka-1-1, Toyohashi 441-8580, Japan - Source
Thin solid films. 2005, Vol 484, Num 1-2, pp 174-183, 10 p ; ref : 29 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Author keyword
- 68.55 81.15 Sapphire Epi-GaN buffer layer Epitaxial ZnO:Al Pulsed laser deposition
- Keyword (fr)
- Addition aluminium Composé binaire Couche mince Couche tampon Couche épitaxique Croissance cristalline en phase vapeur Dopage Dépendance température Effet pression Epaisseur Etude expérimentale Laser pulsé Mode empilement Méthode ablation laser Photoluminescence RHEED Semiconducteur II-VI Zinc oxyde O Zn Substrat Al2O3 Substrat GaN ZnO Composé minéral Métal transition composé
- Keyword (en)
- Aluminium additions Binary compounds Thin films Buffer layer Epitaxial layers Crystal growth from vapors Doping Temperature dependence Pressure effects Thickness Experimental study Pulsed lasers Stacking sequence Laser ablation technique Photoluminescence RHEED II-VI semiconductors Zinc oxides Inorganic compounds Transition element compounds
- Keyword (es)
- Capa tampón Doping Modo apilamiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55E Ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15F Laser deposition
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16886667
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2005.03.011 
https://dx.doi.org/10.1016/j.tsf.2005.03.011
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