Surface transient effects in ultralow-energy O2+ sputtering of silicon
- Author
- CHANBASHA, A. R1 ; WEE, A. T. S1
[1] Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore - Source
Surface and interface analysis. 2005, Vol 37, Num 7, pp 628-632, 5 p ; ref : 30 ref
- CODEN
- SIANDQ
- ISSN
- 0142-2421
- Scientific domain
- General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley, Chichester
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- secondary ion mass spectroscopy sputter rate surface transient ultralow energy
- Keyword (fr)
- Angle incidence Etalonnage Phénomène transitoire Pulvérisation irradiation SIMS Silicium Si
- Keyword (en)
- Incidence angle Calibration Transients Sputtering SIMS Silicon
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I20 Impact phenomena (including electron spectra and sputtering) / 001B70I20R Atomic, molecular, and ion beam impact and interactions with surfaces
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16888155
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/sia.2058 
https://dx.doi.org/10.1002/sia.2058
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