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Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs

Author
ORTIZ-CONDE, Adelmo1 ; GARCIA-SANCHEZ, Francisco J1 ; MALOBABIC, Slavica1
[1] Solid State Electronics Laboratory, Simón Bolívar University, Caracas 1080, Venezuela
Source

I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1669-1672, 4 p ; ref : 19 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Intrinsic channel MOS compact modeling symmetric DG MOSFET undoped body MOS
Keyword (fr)
Modélisation Méthode analytique Potentiel surface Solution exacte Transistor MOSFET Transistor grille double
Keyword (en)
Modeling Analytical method Surface potential Exact solution MOSFET Dual gate transistor
Keyword (es)
Modelización Método analítico Potencial superficie Solución exacta Transistor de compuerta doble
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16896804

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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