Study of 4H-SiC trench MOSFET structures
- Author
- CHEN, L1 ; GUY, O. J1 ; JENNINGS, M. R1 ; IGIC, P1 ; WILKS, S. P1 ; MAWBY, P. A1
[1] School of Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, United Kingdom - Source
Solid-state electronics. 2005, Vol 49, Num 7, pp 1081-1085, 5 p ; ref : 18 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- 4H-SiC Breakdown Electric field On-state resistance Trench MOSFET
- Keyword (fr)
- Disruption électrique Dopage Endommagement Evaluation performance Modèle 2 dimensions Optimisation Semiconducteur type p Silicium carbure Simulation numérique Technologie tranchée Transistor MOSFET C Si SiC
- Keyword (en)
- Electric breakdown Doping Damaging Performance evaluation Two dimensional model Optimization p type semiconductor Silicon carbide Numerical simulation Trench technology MOSFET
- Keyword (es)
- Disrupción eléctrica Doping Deterioración Evaluación prestación Modelo 2 dimensiones Optimización Semiconductor tipo p Silicio carburo Simulación numérica Tecnología trinchera
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16938493
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2005.05.003 
https://dx.doi.org/10.1016/j.sse.2005.05.003
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