4-Mb MOSFET-selected μtrench phase-change memory experimental chip
- Author
- BEDESCHI, Ferdinando1 ; BEZ, Roberto2 ; OTTOGALLI, Federica2 ; PELLIZZER, Fabio2 ; PIROVANO, Agostino2 ; RESTA, Claudio4 5 ; TORELLI, Guido3 ; TOSI, Marina2 ; BOFFINO, Chiara3 4 ; BONIZZONI, Edoardo3 4 ; CASSIODORO BUDA, Egidio1 ; CASAGRANDE, Giulio1 ; COSTA, Lucio1 ; FERRARO, Marco1 ; GASTALDI, Roberto1 ; KHOURI, Osama1
[1] STMicroelectronics, Memory Product Group, 20041 Agrate Brianza, Italy
[2] STMicro electronics, Central R&D, 20041 Agrate Brianza, Italy
[3] Department of Electronics, University of Pavia, 27100 Pavia, Italy
[4] Studio di Microelettronica, STMicroelectronics and University of Pavia, 27100 Pavia, Italy
[5] Memory Product Group, STMicroelectronics, 20041 Agrate Brianza, Italy - Conference title
- 2004 European Solid State Circuits Conference (ESSCIRC)
- Conference name
- ESSCIRC'2004 European Solid-State Circuits Conference (30 ; Leuven 2004-09-21)
- Author (monograph)
- KOCH, Rudolf (Editor)1 ; RUSU, Stefan (Editor)2
[1] Infineon Technologies, Munich 81677, Germany
[2] Intel Corporation, Santa Clara, CA 95052, United States - Source
IEEE journal of solid-state circuits. 2005, Vol 40, Num 7, pp 1557-1565, 9 p ; ref : 15 ref
- CODEN
- IJSCBC
- ISSN
- 0018-9200
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Cascode bitline biasing Phase-Change Memories nonvolatile memories sense amplifier
- Keyword (fr)
- Amplificateur Circuit intégré Dispositif à mémoire Distribution courant Evaluation performance Haute performance Modulation impulsion codage Montage cascode Mémoire flash Mémoire non volatile Technologie MOS complémentaire Temps accès Transistor MOSFET
- Keyword (en)
- Amplifier Integrated circuit Memory devices Current distribution Performance evaluation High performance Pulse code modulation Cascode connection Flash memory Non volatile memory Complementary MOS technology Access time MOSFET
- Keyword (es)
- Amplificador Circuito integrado Distribución corriente Evaluación prestación Alto rendimiento Modulación impulsión codificación Montaje cascode Memoria flash Memoria no volátil Tecnología MOS complementario Tiempo acceso
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03I Storage and reproduction of information / 001D03I02 Magnetic and optical mass memories
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16950786
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JSSC.2005.847531 
https://dx.doi.org/10.1109/JSSC.2005.847531
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