Optical studies of bulk and homoepitaxial films of III-V nitride semiconductors
- Autor
- FREITAS, Jaime A1
[1] Naval Research Laboratory, Electronic Science and Technology Division, Code 6877. 4555 Overlook Ave., S.W, Washington DC 20375-5347, United States - Titulo de la conferencia
- Bulk Nitride Workshop. The international workshop on bulk semiconductors III
- Nombre de la conferencia
- International Workshop on Bulk Nitride Semiconductors III (Zakopane 2004-09-04)
- Autor ( monografía)
- FREITAS, Jaime A (Editor)1 ; SITAR, Zlatko (Editor)2
[1] Naval Research Laboratory, Washington, DC, United States
[2] North Carolina State University, Raleigh, NC, United States - Fuente
Journal of crystal growth. 2005, Vol 281, Num 1, pp 168-182, 15 p ; ref : 57 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- 71.35.-y Al. Cathodoluminescence 71.70.Ch 78.40.Fy 78.55.-m A1. X-ray diffraction A2. Homoepitaxial Al. Excitons Al. Phonons Al. Photoluminescence Al. Raman Bl. AlN Bl. GaN
- Palabra clave (fr)
- Aluminium nitrure Composé minéral Couche épitaxique Diffraction RX Diffusion RX Défaut cristallin Gallium nitrure Homoépitaxie Impureté Nitrure Phonon Profil raie Propriété optique Propriété volume Semiconducteur III-V Structure électronique 78 AlN
- Palabra clave (in)
- Aluminium nitrides Inorganic compounds Epitaxial layers XRD X-ray scattering Crystal defects Gallium nitrides Homoepitaxy Impurities Nitrides Phonons Line shape Optical properties Bulk properties III-V semiconductors Electronic structure
- Palabra clave (es)
- Homoepitaxia
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth
- Disciplina
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 16955292
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2005.03.048 
https://dx.doi.org/10.1016/j.jcrysgro.2005.03.048
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