Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures
- Author
- KNAP, W1 2 ; SKIERBISZEWSKI, C1 3 ; DYBKO, K4 ; ŁUSAKOWSKI, J2 5 ; SIEKACZ, M1 ; GRZEGORY, I1 ; POROWSKI, S1
[1] High Pressure Research Center, Polish Academy of Sciences, 01-142 Warsaw, Poland
[2] GES- UMR, CNRS - Université Montpellier2, Place E.Bataillon, 34950 Montpellier, France
[3] TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland
[4] Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
[5] Institute of Experimental Physics, University of Warsaw, Hoz˚a 69, 00-681 Warsaw, Poland - Conference title
- Bulk Nitride Workshop. The international workshop on bulk semiconductors III
- Conference name
- International Workshop on Bulk Nitride Semiconductors III (Zakopane 2004-09-04)
- Author (monograph)
- FREITAS, Jaime A (Editor)1 ; SITAR, Zlatko (Editor)2
[1] Naval Research Laboratory, Washington, DC, United States
[2] North Carolina State University, Raleigh, NC, United States - Source
Journal of crystal growth. 2005, Vol 281, Num 1, pp 194-201, 8 p ; ref : 19 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 72.10.Fk 72.20.My 73.50.Jt A3. Molecular Beam epitaxy A3. Quantum wells B1. Nitrides
- Keyword (fr)
- Aluminium nitrure Article synthèse Composé minéral Diffusion dislocation Dépendance température Effet température Epitaxie jet moléculaire Gallium nitrure Gaz électron 2 dimensions Hétérostructure Interaction électron impureté Ionisation impureté Mobilité électron Mécanisme croissance Plasma Température ambiante AlGaN He
- Keyword (en)
- Aluminium nitrides Reviews Inorganic compounds Dislocation scattering Temperature dependence Temperature effects Molecular beam epitaxy Gallium nitrides Two-dimensional electron gas Heterostructures Electron-impurity interactions Impurity ionization Electron mobility Growth mechanism Plasma Ambient temperature
- Keyword (es)
- Ionización impureza Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16955295
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2005.03.025 
https://dx.doi.org/10.1016/j.jcrysgro.2005.03.025
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