Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers
- Author
- KAMLER, G1 ; BORYSIUK, J1 ; WEYHER, J. L1 2 ; CZEMECKI, R1 ; LESZCZYNSKI, M1 ; GRZEGORY, I1 ; POROWSKI, S1
[1] Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
[2] Radboud University Nijmegen, IMM, Exp. Solid State Physics III, Toernooiveld 1, 6525 ED Nijmegen, Netherlands - Source
Journal of crystal growth. 2005, Vol 282, Num 1-2, pp 45-48, 4 p ; ref : 13 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 61.72.Ff 61.72.Nn A1. Etching A1. Planar defects B1. Gallium nitride
- Keyword (fr)
- Couche épitaxique Croissance cristalline Dopage Défaut plan Etat fondu Gallium nitrure Gravure sélective Magnésium Matériau polaire Microscopie électronique transmission Méthode MOVPE Polarité Pression Substrat Mg
- Keyword (en)
- Epitaxial layers Crystal growth Doping Plane defects Melts Gallium nitrides Selective etching Magnesium Polar material Transmission electron microscopy MOVPE method Polarity Pressure Substrates
- Keyword (es)
- Doping Grabado selectivo Material polar Método MOVPE Polaridad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16983896
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2005.04.092 
https://dx.doi.org/10.1016/j.jcrysgro.2005.04.092
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