Drive performance of an asymmetric MOSFET structure : the peak device
- Author
- STOCKINGER, M1 ; WILD, A2 ; SELBERHERR, S1
[1] Institute for Microelectronics, TU Vienna, Gusshausstr. 27-29/E360, 1040 Vienna, Austria
[2] Motorola, Tempe, AZ 85284, United States - Source
Microelectronics journal. 1999, Vol 30, Num 3, pp 229-233 ; ref : 8 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Conception Contact métal oxyde Courant fuite Optimisation Profil dopage Semiconducteur Simulation Transistor effet champ
- Keyword (en)
- Design Metal oxide contact Leakage current Optimization Doping profile Semiconductor materials Simulation Field effect transistor
- Keyword (es)
- Diseño Contacto metal óxido Corriente escape Optimización Perfil doping Semiconductor(material) Simulación Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1700691
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0026-2692(98)00111-6 
https://dx.doi.org/10.1016/S0026-2692(98)00111-6
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