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Structural characterization of double stacking faults induced by cantilever bending in nitrogen-doped 4H-SiC

Author
REGULA, G1 ; LANCIN, M1 ; IDRISSI, H1 ; PICHAUD, B1 ; DOUIN, J2
[1] Thermodynamique, Propiétés Electriques, Contraintes et Structures anx Echelles Nanométriques, Unité Mixte de Recherche associée au CNRS 6122, Université Paul Cézanne, 13397 Marseille, France
[2] Laboratoire d'Etudes des Microstructures, Laboratoire Mixte ONERA-CNRS. BP 72, 92332 Châtillon, France
Source

Philosophical magazine letters. 2005, Vol 85, Num 5, pp 259-267, 9 p ; ref : 39 ref

CODEN
PMLEEG
ISSN
0950-0839
Scientific domain
Crystallography; Condensed state physics
Publisher
Taylor & Francis, London
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Dislocation imparfaite Dopage Défaut cristallin Défaut empilement Flexion Glissement dislocation Microscopie optique Microscopie électronique transmission Silicium carbure Structure atomique Transformation phase Vecteur Burgers 6172N Si SiC
Keyword (en)
Partial dislocation Doping Crystal defects Stacking faults Bending Dislocation glide Optical microscopy Transmission electron microscopy Silicon carbides Atomic structure Phase transformations Burgers vector
Keyword (es)
Dislocación imperfecta Doping Deslizamiento díslocación
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17056717

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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