Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures
- Author
- JHOU, Y. D1 ; CHEN, C. H2 ; CHUANG, R. W1 ; CHANG, S. J1 ; SU, Y. K1 ; CHANG, P. C3 ; CHEN, P. C3 ; HUNG, H1 ; WANG, S. M1 ; YU, C. L1
[1] Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan, Province of China
[2] Department of Electronic Engineering, Cheng Shin University, Kaohsiung, 833, Taiwan, Province of China
[3] Department of Electronic Engineering, Nan Jeon Institute of Technology, Yan-Hsui, 737, Taiwan, Province of China - Source
Solid-state electronics. 2005, Vol 49, Num 8, pp 1347-1351, 5 p ; ref : 13 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- GaN InGaN LED MOCVD MQW OEIC Photodetector Photodiode
- Keyword (fr)
- Composé binaire Composé ternaire Contraste Courant obscurité Densité courant Diode électroluminescente Dispositif optoélectronique Disruption électrique Fabrication microélectronique Gallium nitrure Indium nitrure Méthode MOCVD Optoélectronique intégrée Photodiode Photodétecteur Puits quantique multiple Tension amorçage Tension polarisation Ga In N Ga N GaN InGaN
- Keyword (en)
- Binary compound Ternary compound Contrast Dark current Current density Light emitting diode Optoelectronic device Electric breakdown Microelectronic fabrication Gallium nitride Indium nitride MOCVD Integrated optoelectronics Photodiode Photodetector Multiple quantum well Breakdown voltage Bias voltage
- Keyword (es)
- Compuesto binario Compuesto ternario Contraste Corriente obscuridad Densidad corriente Diodo electroluminescente Dispositivo optoelectrónico Disrupción eléctrica Fabricación microeléctrica Galio nitruro Indio nitruro Optoelectrónica integrada Fotodiodo Fotodetector Pozo cuántico múltiple Voltaje perforación Voltage polarización
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02C Optical and optoelectronic circuits / 001D03G02C2 Integrated optoelectronics. Optoelectronic circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17083679
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2005.06.002 
https://dx.doi.org/10.1016/j.sse.2005.06.002
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