Non-destructive high-resolution characterization of buried interfaces for advanced interconnect and packaging architectures : Experiments and modeling
- Author
- RAMANATHAN, Shriram1 ; CHUAN HU2 ; PICKETT, Evan1 ; MORROW, Patrick1 ; YONGMEI LIU3 ; DIAS, Rajen3
[1] Components Research, Intel Corporation, 2501 NE 229th Avenue, MS RA3-252, Hillsboro, OR 97124, United States
[2] Components Research, Intel Corporation, Chandler, AZ 85226, United States
[3] Assembly Technology Development, Intel Corporation, Chandler, AZ 85226, United States - Source
Microelectronic engineering. 2005, Vol 82, Num 1, pp 84-91, 8 p ; ref : 12 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Acoustic microscopy Buried interfaces Resolution Thermal microscopy Three-dimensional integrated circuits Wafer bonding
- Keyword (fr)
- Appareil éclairage Caractérisation défaut Cavité dans réseau Dimension défaut Distribution non uniforme Diélectrique basse permittivité Délaminage Désadaptation Fabrication microélectronique Formation image Haute résolution Imagerie thermique Impédance Interconnexion Liaison matériau Miniaturisation Modèle 3 dimensions Modélisation Multicouche Méthode non destructive Packaging électronique Pastille électronique Puce à bosses Technologie MOS complémentaire 4272
- Keyword (en)
- Lighting fitting Defect characterization Void Defect size Non uniform distribution Low k dielectric Delamination Mismatching Microelectronic fabrication Imaging High resolution Thermal imaging Impedance Interconnection Bonding Miniaturization Three dimensional model Modeling Multiple layer Non destructive method Electronic packaging Wafer Flip-chip Complementary MOS technology
- Keyword (es)
- Aparato alumbrado Caracterización defecto Cavidad en red Dimensión imperfección Distribución no uniforme Dieléctrico baja constante dieléctrica Delaminación Desadaptación Fabricación microeléctrica Formación imagen Alta resolucion Imageria termica Impedancia Interconexión Miniaturización Modelo 3 dimensiones Modelización Capa múltiple Método no destructivo Packaging electrónico Pastilla electrónica Tecnología MOS complementario
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B72 Optical sources and standards
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F16 Imaging devices
- Discipline
- Electronics Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17100936
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2005.06.005 
https://dx.doi.org/10.1016/j.mee.2005.06.005
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