PbSe nanocrystal solids for n- and p-channel thin film field-effect transistors
- Author
- TALAPIN, Dmitri V1 ; MURRAY, Christopher B1
[1] IBM Research Division, T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, United States - Source
Science (Washington, D.C.). 2005, Vol 310, Num 5745, pp 86-89, 4 p ; ref : 26 ref
- CODEN
- SCIEAS
- ISSN
- 0036-8075
- Scientific domain
- Multidisciplinary
- Publisher
- American Association for the Advancement of Science, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Activation chimique Canal n Canal p Densité courant Diminution coût Dopage Mobilité trou Mobilité électron Nanocristal Optoélectronique Plomb séléniure Point quantique Superréseau Technologie MOS complémentaire Traitement chimique Transistor couche mince Transistor effet champ Macroélectronique Pb Se PbSe
- Keyword (en)
- Chemical activation n channel p channel Current density Cost lowering Doping Hole mobility Electron mobility Nanocrystal Optoelectronics Lead selenides Quantum dot Superlattice Complementary MOS technology Chemical treatment Thin film transistor Field effect transistor Large area electronics
- Keyword (es)
- Canal n Canal p Densidad corriente Reducción costes Doping Movilidad agujero Movilidad electrón Nanocristal Optoelectrónica Punto cuántico Superred Tecnología MOS complementario Tratamiento químico Transistor capa delgada Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17164695
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1126/science.1116703 
https://dx.doi.org/10.1126/science.1116703
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