A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET
- Author
- FUCHS, Emmanuel1 2 3 ; DOLLFUS, Philippe2 ; LE CARVAL, Gilles3 ; BARRAUD, Sylvain3 ; VILLANUEVA, Davy4 ; SALVETTI, Frederic4 ; JAOUEN, Hervé1 ; SKOTNICKI, Thomas1
[1] STMicrolelectronics, Crolles 38926, France
[2] Institut d'Electronique Fondamentale UMR 8622 entre National de la Recherche Scientifique (CNRS)/Université Paris-Sud XI, Orsay 91405, France
[3] Commissariat l'Energie Atomique-Le Laboratoire d'Electronique, de Technologie et d'Instrumentation (CEA-LETI)/D2NT/ LSCDP Grenoble, France
[4] Philips Semiconductor, Crolles 38926, France - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 10, pp 2280-2289, 10 p ; ref : 26 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Carrier transport MOSFET compact model quasi-ballistic
- Keyword (fr)
- Caractéristique courant tension Diffusion onde Modélisation Méthode Monte Carlo Nanoélectronique Phénomène transport Rétrodiffusion Simulation numérique Théorie diffusion Transistor MOSFET Transport balistique
- Keyword (en)
- Voltage current curve Wave scattering Modeling Monte Carlo method Nanoelectronics Transport process Backscattering Numerical simulation Scattering theory MOSFET Ballistic transport
- Keyword (es)
- Característica corriente tensión Difusión onda Modelización Método Monte Carlo Nanoelectrónica Fenómeno transporte Retrodifusión Simulación numérica Teoría difusión Transporte balístico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17169200
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.856181 
https://dx.doi.org/10.1109/TED.2005.856181
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1109\/TED.2005.856181\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"52\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"2280\";s:8:\"\u0000*\u0000epage\";s:4:\"2289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"FUCHS\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Emmanuel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:17:\"DOLLFUS, Philippe\";i:1;s:17:\"LE CARVAL, Gilles\";i:2;s:16:\"BARRAUD, Sylvain\";i:3;s:16:\"VILLANUEVA, Davy\";i:4;s:18:\"SALVETTI, Frederic\";i:5;s:14:\"JAOUEN, Herv\u00e9\";i:6;s:17:\"SKOTNICKI, Thomas\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1109\/TED.2005.856181\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"52\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"2280\";s:8:\"\u0000*\u0000epage\";s:4:\"2289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"FUCHS\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Emmanuel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:17:\"DOLLFUS, Philippe\";i:1;s:17:\"LE CARVAL, Gilles\";i:2;s:16:\"BARRAUD, Sylvain\";i:3;s:16:\"VILLANUEVA, Davy\";i:4;s:18:\"SALVETTI, Frederic\";i:5;s:14:\"JAOUEN, Herv\u00e9\";i:6;s:17:\"SKOTNICKI, Thomas\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:23:\"10.1109\/TED.2005.856181\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1109\/TED.2005.856181\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"52\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"2280\";s:8:\"\u0000*\u0000epage\";s:4:\"2289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"FUCHS\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Emmanuel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:17:\"DOLLFUS, Philippe\";i:1;s:17:\"LE CARVAL, Gilles\";i:2;s:16:\"BARRAUD, Sylvain\";i:3;s:16:\"VILLANUEVA, Davy\";i:4;s:18:\"SALVETTI, Frederic\";i:5;s:14:\"JAOUEN, Herv\u00e9\";i:6;s:17:\"SKOTNICKI, Thomas\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1109\/TED.2005.856181\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"52\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"2280\";s:8:\"\u0000*\u0000epage\";s:4:\"2289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"FUCHS\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Emmanuel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:17:\"DOLLFUS, Philippe\";i:1;s:17:\"LE CARVAL, Gilles\";i:2;s:16:\"BARRAUD, Sylvain\";i:3;s:16:\"VILLANUEVA, Davy\";i:4;s:18:\"SALVETTI, Frederic\";i:5;s:14:\"JAOUEN, Herv\u00e9\";i:6;s:17:\"SKOTNICKI, Thomas\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1109\/TED.2005.856181\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"52\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"2280\";s:8:\"\u0000*\u0000epage\";s:4:\"2289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"FUCHS\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Emmanuel\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:17:\"DOLLFUS, Philippe\";i:1;s:17:\"LE CARVAL, Gilles\";i:2;s:16:\"BARRAUD, Sylvain\";i:3;s:16:\"VILLANUEVA, Davy\";i:4;s:18:\"SALVETTI, Frederic\";i:5;s:14:\"JAOUEN, Herv\u00e9\";i:6;s:17:\"SKOTNICKI, Thomas\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:95:\"A new backscattering model giving a description of the quasi-ballistic transport in nano-MOSFET\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"10\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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