Studies of Ti- and Ni-germanide Schottky contacts on n-Ge(100) substrates
- Author
- DEDONG HAN1 ; YI WANG1 ; DAYU TIAN1 ; WEI WANG1 ; XIAOYAN LIU1 ; JINFENG KANG1 ; RUQI HAN1
[1] Institute of Microelectronics, Peking University, Beijing 100871, China - Source
Microelectronic engineering. 2005, Vol 82, Num 2, pp 93-98, 6 p ; ref : 14 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Ge Ni-Germanide Schottky Contacts
- Keyword (fr)
- Barrière Schottky Caractéristique capacité tension Caractéristique courant tension Caractéristique électrique Contact électrique Hauteur barrière Nickel Germaniure Optimisation Pulvérisation cathodique Recuit Relation fabrication propriété Température recuit Titane Germaniure Ge
- Keyword (en)
- Schottky barrier Voltage capacity curve Voltage current curve Electrical characteristic Electric contact Barrier height Nickel Germanides Optimization Cathodic sputtering Annealing Fabrication property relation Annealing temperature Titanium Germanides
- Keyword (es)
- Barrera Schottky Característica capacidad tensión Característica corriente tensión Característica eléctrica Contacto eléctrico Altura barrera Niquel Germaniuro Optimización Pulverización catódica Recocido Relación fabricación propiedad Temperatura recocido Titanio Germaniuro
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17169222
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2005.06.004 
https://dx.doi.org/10.1016/j.mee.2005.06.004
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