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Full-chip lithography simulation and design analvsis : How OPC is changing IC design

Author
SPENCE, Chris1
[1] Advanced Micro Devices, 1 AMD Place, Sunnyvale, CA 94088-3453, United States
Conference title
Design and process integration for microelectronic manufacturing III (San Jose CA, 3-4 March 2005)
Conference name
Design and process integration for microelectronic manufacturing. Conference (3 ; San Jose CA 2005-03-03)
Author (monograph)
Liebmann, Lars W (Editor)
International Society for Optical Engineering, Bellingham WA, United States (Organiser of meeting)
Source

SPIE proceedings series. 2005, pp xi-xxiv ; ref : 30 ref

ISBN
0-8194-5736-1
Scientific domain
Electronics; Optics; Physics; Telecommunications
Publisher
SPIE, Bellingham WA
Publication country
International
Document type
Conference Paper
Language
English
Keyword (fr)
Article synthèse Automatisation conception électronique Conception circuit intégré Effet proximité(lithographie) Fabrication microélectronique Implantation circuit Photolithographie Procédé fabrication Simulation système
Keyword (en)
Review Electronic design automation Integrated circuit design Proximity effect (lithography) Microelectronic fabrication Circuit layout Photolithography Manufacturing process System simulation
Keyword (es)
Artículo síntesis Fabricación microeléctrica Fotolitografía Procedimiento fabricación Simulación sistema
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17199366

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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