MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (111) substrate
- Author
- JI, S. Y1 ; LALEV, G. M2 ; WANG, J. F1 ; LIM, J. W1 ; YOO, J. H1 ; SHINDO, D1 ; ISSHIKI, M1
[1] Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan
[2] Manufacturing Enaineering Centre, Cardiff University, Queen's Building, Cardiff CF24 0YF, United Kingdom - Source
Journal of crystal growth. 2005, Vol 285, Num 1-2, pp 284-294, 11 p ; ref : 28 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 68.55.-a 73.61.J Al. Reflective high-energy electron diffraction 81.15.H A3. Molecular beam epitaxy B2. Semiconducting silicon compounds
- Keyword (fr)
- Couche épitaxique Croissance film Diffraction RX Epaisseur Epitaxie jet moléculaire Fer siliciure Hydrogène 1 Microscopie électronique balayage Monocristal Mécanisme croissance Méthode SSMBE Recuit Silicium composé Substrat Température Si
- Keyword (en)
- Epitaxial layers Film growth XRD Thickness Molecular beam epitaxy Iron silicides Hydrogen 1 Scanning electron microscopy Monocrystals Growth mechanism Solid source molecular beam epitaxy Annealing Silicon compounds Substrates Temperature
- Keyword (es)
- Mecanismo crecimiento Método SSMBE
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17213914
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2005.07.042 
https://dx.doi.org/10.1016/j.jcrysgro.2005.07.042
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