Process and characteristics of modified schottky barrier (MSB) p-channel FinFETs
- Author
- TSUI, Bing-Yue1 2 ; LIN, Chia-Pin1
[1] Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, Province of China
[2] National Nano Device Laboratories, Hsinchu 300, Taiwan, Province of China - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 11, pp 2455-2462, 8 p ; ref : 25 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- FinFET Schottky barrier (SB) implant-to-silicide (ITS) silicon-on-insulator (SQI)
- Keyword (fr)
- Analyse activation Barrière Schottky Canal court Canal p Caractéristique électrique Conditions opératoires Diélectrique permittivité élevée Effet dimensionnel Energie activation Evaluation performance Grosseur grain Nanoélectronique Siliciuration Stabilité thermique Technologie autoalignée Technologie silicium sur isolant Transistor MOSFET Transistor grille double
- Keyword (en)
- Activation analysis Schottky barrier Short channel p channel Electrical characteristic Process conditions High k dielectric Size effect Activation energy Performance evaluation Grain size Nanoelectronics Siliconizing Thermal stability Self aligned technology Silicon on insulator technology MOSFET Dual gate transistor
- Keyword (es)
- Análisis activación Barrera Schottky Canal corto Canal p Característica eléctrica Condiciones operatorias Dieléctrico alta constante dieléctrica Efecto dimensional Energía activación Evaluación prestación Grosor grano Nanoelectrónica Siliciuración Estabilidad térmica Tecnología rejilla autoalineada Tecnología silicio sobre aislante Transistor de compuerta doble
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17221944
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.857178 
https://dx.doi.org/10.1109/TED.2005.857178
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