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Silicon for primary metrology : the effect of hydrogen on its perfection

Author
BECKER, P1 ; BETTIN, H1 ; KUETGENS, U1 ; HALLMANN-SEIFFERT, B2 ; RIEMANN, H2
[1] Physikalisch-Technische Bundesanstalt Braunschweig, Bundesallee 100, 38116 Braunschweig, Germany
[2] Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany
Source

Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 22, pp 4109-4114, 6 p ; ref : 19 ref

CODEN
JPAPBE
ISSN
0022-3727
Scientific domain
Condensed state physics; Physics; Plasma physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Détection défaut Hydrogène Mesure masse Paramètre cristallin Silicium Unité mesure Volume moléculaire 0630D Si
Keyword (en)
Defect detection Hydrogen Mass measurement Lattice parameters Silicon Units (measurement) Molecular volume
Keyword (es)
Detección imperfección Volumen molecular
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00F Metrology, measurements and laboratory procedures / 001B00F30 Measurements common to several branches of physics and astronomy / 001B00F30D Mass and density

Discipline
Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17271440

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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