Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As
- Author
- MASMANIDIS, S. C1 ; TANG, H. X1 ; MYERS, E. B1 ; MO LI1 ; DE GREVE, K1 2 ; VERMEULEN, G1 2 ; VAN ROY, W2 ; ROUKES, M. L1
[1] Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125, United States
[2] IMEC, Kapeldreef 75, 3001 Leuven, Belgium - Source
Physical review letters. 2005, Vol 95, Num 18, pp 187206.1-187206.4 ; ref : 26 ref
- CODEN
- PRLTAO
- ISSN
- 0031-9007
- Scientific domain
- Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition manganèse Anisotropie magnétique Dispositif nanoélectromécanique Effet magnétoélastique Gallium arséniure Impureté Magnétostriction Semiconducteur III-V Semiconducteur semimagnétique Variation angulaire 7550P 7580
- Keyword (en)
- Manganese additions Magnetic anisotropy Nanoelectromechanical device Magnetoelastic effects Gallium arsenides Impurities Magnetostriction III-V semiconductors Semimagnetic semiconductors Angular variation
- Keyword (es)
- Dispositivo nanoelectromecánico Variación angular
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E50 Studies of specific magnetic materials / 001B70E50P Magnetic semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E80 Magnetomechanical and magnetoelectric effects, magnetostriction
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17291319
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevLett.95.187206 
https://dx.doi.org/10.1103/PhysRevLett.95.187206
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