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Investigation of interface electronic structure of annealed Ti/Ni multilayers

Author
BHATT, Pramod1 ; CHAUDHARI, S. M1
[1] UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore-452017, MP, India
Source

Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 48, pp 7465-7488, 24 p ; ref : 73 ref

CODEN
JCOMEL
ISSN
0953-8984
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Bande valence Diffraction RX Energie liaison Etat électronique interface Evaporation faisceau électronique Multicouche Nickel Niveau coeur Profil profondeur Recuit Réaction interface Spectre photoélectron Titane Transfert charge 7321A
Keyword (en)
Valence bands XRD Binding energy Interface electron state Electron beam evaporation Multilayers Nickel Core levels Depth profiles Annealing Interface reaction Photoelectron spectra Titanium Charge transfer
Keyword (es)
Estado electrónico interfase Reacción interfase Transferencia carga
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems / 001B70C21A Thin films and multilayers

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17297489

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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