Scaling characteristics of fNQS and ft in NMOSFETs with uniform and non-uniform channel doping
- Author
- SRINIVASAN, R1 ; BHAT, N1
[1] Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560 012, India - Source
International journal of electronics. 2005, Vol 92, Num 12, pp 709-718, 10 p ; ref : 19 ref
- ISSN
- 0020-7217
- Scientific domain
- Electronics; Telecommunications
- Publisher
- Taylor & Francis, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Courant fuite Dopage Etude comparative Fréquence transition Gain Miniaturisation Technologie NMOS Transconductance Transistor MOSFET
- Keyword (en)
- Leakage current Doping Comparative study Transition frequency Gain Miniaturization NMOS technology Transconductance MOSFET
- Keyword (es)
- Corriente escape Doping Estudio comparativo Frecuencia transición Ganancia Miniaturización Tecnología NMOS Transconductancia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17300190
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1080/00207210500304577 
https://dx.doi.org/10.1080/00207210500304577
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