Comparing carbon nanotube transistors: The ideal choice : A novel tunneling device design
- Author
- APPENZELLER, Joerg1 ; LIN, Yu-Ming1 ; KNOCH, Joachim2 ; ZHIHONG CHEN1 ; AVOURIS, Phaedon1
[1] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, United States
[2] Institute for Thin Film and Interfaces, 52425 Jülich, Germany - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 12, pp 2568-2576, 9 p ; ref : 37 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Carbon nanotube (CN) field-effect transistor (FET). tunneling <T device
- Keyword (fr)
- Barrière Schottky Caractéristique fonctionnement Corps flottant Couche ultramince Dispositif effet tunnel Dispositif nanotube Evaluation performance Haute performance Miniaturisation Nanotube carbone Nanoélectronique Profil dopage Transistor MOSFET Transistor effet champ
- Keyword (en)
- Schottky barrier Performance characteristic Floating body Ultrathin films Tunneling device Nanotube devices Performance evaluation High performance Miniaturization Carbon nanotubes Nanoelectronics Doping profile MOSFET Field effect transistor
- Keyword (es)
- Barrera Schottky Característica funcionamiento Cuerpo flotante Dispositivo efecto túnel Evaluación prestación Alto rendimiento Miniaturización Nanoelectrónica Perfil doping Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17315945
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.859654 
https://dx.doi.org/10.1109/TED.2005.859654
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