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Self-alignment of self-assembled InAs quantum dots

Author
SUNG UI HONG1 ; JIN SOO KIM1 ; JIN HONG LEE1 ; KWACK, Ho-Sang1 ; HAN, Won-Seok1 ; DAE KON OH1
[1] Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-Dong, Yuseong-Gu, Daejeon, 305-350, Korea, Republic of
Source

Journal of crystal growth. 2006, Vol 286, Num 1, pp 18-22, 5 p ; ref : 17 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
78.66.Fd 81.07.St 81.15.Hi A1. In-interruption A1. Self-alignment A3. MBE A3. Quantum dot B1. InAs
Keyword (fr)
Alignement Autoassemblage Composé binaire Croissance cristalline en phase vapeur Epitaxie jet moléculaire Etude expérimentale Indium arséniure Microscopie force atomique Microscopie tunnel balayage Microscopie électronique transmission Nanomatériau Photoluminescence Point quantique Semiconducteur III-V As In InAs Substrat GaAs Composé minéral
Keyword (en)
Alignment Self-assembly Binary compounds Crystal growth from vapors Molecular beam epitaxy Experimental study Indium arsenides Atomic force microscopy Scanning tunneling microscopy Transmission electron microscopy Nanostructured materials Photoluminescence Quantum dots III-V semiconductors Inorganic compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication / 001B80A16D Self-assembly

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17322836

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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