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Resist debris formation in electron beam lithography

Author
DESHMUKH, P. R1 ; RANGRA, K. J1 ; WADHAWAN, O. P1
[1] Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani (Raj) 333 031, India
Source

Vacuum. 1999, Vol 52, Num 4, pp 469-476 ; ref : 20 ref

CODEN
VACUAV
ISSN
0042-207X
Scientific domain
Metallurgy, welding; Physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Débris Effet dimensionnel Effet proximité Fabrication microélectronique Faisceau électronique Formation Lithographie faisceau électron Modèle 2 dimensions Resist Simulation
Keyword (en)
Debris Size effect Proximity effect Microelectronic fabrication Electron beam Formation Electron beam lithography Two dimensional model Resist Simulation
Keyword (es)
Pedazos Efecto dimensional Efecto proximidad Fabricación microeléctrica Haz electrónico Formación Litografía haz electrón Modelo 2 dimensiones Resistencia Simulación
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1733429

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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