Influence of uniaxial tensile strain on the performance of partially depleted SOI CMOS ring oscillators
- Author
- WEI ZHAO1 ; SEABAUGH, Alan1 ; WINSTEAD, Brian2 ; JOVANOVIC, Dejan2 ; ADAMS, Vance2
[1] Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, United States
[2] Freescale Semiconductor, Inc, Austin, TX 78721, United States - Source
IEEE electron device letters. 2006, Vol 27, Num 1, pp 52-54, 3 p ; ref : 13 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- MOSFET silicon-on-insulator (SOI) stress effects tunneling uniaxial strain
- Keyword (fr)
- Couche appauvrissement Couche inversion Courant grille Dissipation énergie Effet contrainte Effet tunnel Evaluation performance Grille transistor Oscillateur anneau Oxyde grille Pastille électronique Perte arrêt Piézorésistance Technologie MOS complémentaire Technologie silicium sur isolant Transistor MOSFET
- Keyword (en)
- Depletion layer Inversion layer Gate current Energy dissipation Stress effects Tunnel effect Performance evaluation Transistor gate Ring oscillator Gate oxide Wafer Standby loss Piezoresistance Complementary MOS technology Silicon on insulator technology MOSFET
- Keyword (es)
- Capa empobrecimiento Capa inversión Corriente rejilla Disipación energía Efecto túnel Evaluación prestación Rejilla transistor Oscilador anillo Oxido rejilla Pastilla electrónica Pérdida detención Piezoresistividad Tecnología MOS complementario Tecnología silicio sobre aislante
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A1 Oscillators, resonators, synthetizers
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17378484
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2005.861022 
https://dx.doi.org/10.1109/LED.2005.861022
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