Simulation of a Ge-Si hetero-nanocrystal memory
- Author
- DENGTAO ZHAO1 ; YAN ZHU1 ; RUIGANG LI1 ; JIANLIN LIU1
[1] Quantum Structures Laboratory, Department of Electrical Engineering, University of California, Riverside, CA 92521, United States - Source
IEEE transactions on nanotechnology. 2006, Vol 5, Num 1, pp 37-41, 5 p ; ref : 23 ref
- ISSN
- 1536-125X
- Scientific domain
- Electronics; Nanotechnologies, nanostructures, nanoobjects; Optics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Erasing hetero-nanocrystal memory programming retention
- Keyword (fr)
- Activation thermique Bande valence Circuit intégré Courant fuite Effet tunnel Facteur rétention Germanium Mémoire flash Mémoire non volatile Nanocristal Nanoélectronique Puits quantique Silicium oxyde Stockage charge Technologie grille flottante Ge O Si Si SiO2
- Keyword (en)
- Thermal activation Valence band Integrated circuit Leakage current Tunnel effect Retention factor Germanium Flash memory Non volatile memory Nanocrystal Nanoelectronics Quantum well Silicon oxides Charge storage Floating gate technology
- Keyword (es)
- Termoactivación Banda valencia Circuito integrado Corriente escape Efecto túnel Factor retención Germanio Memoria flash Memoria no volátil Nanocristal Nanoelectrónica Pozo cuántico Almacienamiento carga Tecnología rejilla flotante
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17453366
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TNANO.2005.861405 
https://dx.doi.org/10.1109/TNANO.2005.861405
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