Size-dependent electronic energy relaxation in a semiconductor nanocrystal in the strong confinement limit
- Author
- HONG, S.-K1 2 ; YEON, K. H2 ; NAM, S. W1
[1] Department of Display Semiconductor, Korea University, Chungnam 339-700, Korea, Republic of
[2] Department of Physics, Institute for Basic Science Research, College of Natural Science, Chungbuk National University, Chungbuk 361-763, Korea, Republic of - Source
Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 1, pp 48-52, 5 p ; ref : 15 ref
- ISSN
- 1386-9477
- Scientific domain
- Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 72.10.-d Quantum dot 73.23.-b 78.67.-n 78.67.Hc Electronic energy relaxation Förster energy transfer Strong confinement Surface state
- Keyword (fr)
- Effet dimensionnel Etat électronique surface Exciton Modèle microscopique Nanocristal Point quantique Relaxation énergie Semiconducteur Théorie quantique Transfert énergie 7321L
- Keyword (en)
- Size effect Surface electron state Excitons Microscopic model Nanocrystal Quantum dots Energy relaxation Semiconductor materials Quantum theory Energy transfer
- Keyword (es)
- Estado electrónico superficie Modelo microscópico Nanocristal Relajación energía
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems / 001B70C21L Quantum dots
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17507263
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physe.2005.09.009 
https://dx.doi.org/10.1016/j.physe.2005.09.009
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