Influence of the polymer dielectric characteristics on the performance of a quaterthiophene organic field-effect transistor
- Author
- NARAYANAN UNNI, K. N1 ; DABOS-SEIGNON, Sylvie1 ; NUNZI, Jean-Michel1
[1] Laboratoire des Proprietés Optiques des Matériaux et Applications, UMR CNRS 6136, Université Angers, 2 Bd. Lavoisier, 49045 Angers, France - Source
Journal of materials science. 2006, Vol 41, Num 2, pp 317-322, 6 p ; ref : 22 ref
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique fonctionnement Constante diélectrique Courant fuite Densité état Diélectrique Evaluation performance Grille transistor Semiconducteur organique Seuil tension Structure surface Thiophène dérivé Transistor effet champ
- Keyword (en)
- Performance characteristic Permittivity Leakage current Density of states Dielectric materials Performance evaluation Transistor gate Organic semiconductors Voltage threshold Surface structure Thiophene derivatives Field effect transistor
- Keyword (es)
- Característica funcionamiento Constante dieléctrica Corriente escape Densidad estado Dieléctrico Evaluación prestación Rejilla transistor Umbral tensión Estructura superficie Tiofeno derivado Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17540969
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10853-005-2331-y 
https://dx.doi.org/10.1007/s10853-005-2331-y
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