Direct current and alternating current performance in InGaP/InxGa1-xAs FETs using airbridge gate with multiple piers
- Author
- CHEN, H. R1 ; WU, M. Y2 ; LOUR, W. S2 ; HUNG, G. L2 ; SHIH, Y. M2
[1] Department of Electrical Engineering, Private Kung-Shan Institute of Technology and Commerce, Tainan, Taiwan, Province of China
[2] Department of Electrical Engineering, National Taiwan-Ocean University, 2 Peining Road, Keelung, Taiwan, Province of China - Source
Semiconductor science and technology. 1999, Vol 14, Num 4, pp 312-317 ; ref : 13 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Canal transistor Caractéristique courant tension Caractéristique fonctionnement Composé ternaire Concentration porteur charge Courant fuite Dopage Etude expérimentale Fabrication Gallium arséniure Gallium phosphure Indium arséniure Indium phosphure Micropont Semiconducteur Technologie MESA Transconductance Transistor effet champ barrière Schottky Transistor effet champ As Ga In Ga In P InGaP InxGa1-xAs Composé minéral
- Keyword (en)
- Transistor channel Voltage current curve Performance characteristic Ternary compound Charge carrier concentration Leakage current Doping Experimental study Manufacturing Gallium arsenides Gallium phosphide Indium arsenides Indium phosphide Microbridges Semiconductor materials MESA technology Transconductance Metal semiconductor field effect transistor Field effect transistor Inorganic compound
- Keyword (es)
- Canal transistor Característica corriente tensión Característica funcionamiento Compuesto ternario Concentración portador carga Corriente escape Doping Estudio experimental Fabricación Galio fosfuro Indio fosfuro Semiconductor(material) Tecnología MESA Transconductancia Transistor efecto campo barrera Schottky Transistor efecto campo Compuesto inorgánico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1754785
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/14/4/004 
https://dx.doi.org/10.1088/0268-1242/14/4/004
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