Silicon cleaning and defect passivation effects of hydrogen cyanide aqueous solutions
- Author
- TAKAHASHI, Masao1 ; LIU, Yueh-Ling1 ; FUJIWARA, Naozumi1 ; IWASA, Hitoo1 ; KOBAYASHI, Hikaru1
[1] Institute of Scientific and Industrial Research, Japan Science and Technology Organization, Osaka University, and CREST. 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan - Source
Solid state communications. 2006, Vol 137, Num 5, pp 263-267, 5 p ; ref : 24 ref
- CODEN
- SSCOA4
- ISSN
- 0038-1098
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- 81.60.Cp 82.65.Yh 84.60.Jt A. Semiconductors 85.40.Hp A. Surfaces and interfaces C. Impurities in semiconductors D. Photoconductivity and photovoltaics E. X-ray photoelectron spectroscopy
- Keyword (fr)
- Adsorption Cellule solaire Etat défaut Jonction p n Passivation Semiconducteur Silicium oxyde Silicium Solution aqueuse Spectre UV Spectre absorption 7155C 8460J Si SiO2
- Keyword (en)
- Adsorption Solar cells Defect states p n junctions Passivation Semiconductor materials Silicon oxides Silicon Aqueous solutions Ultraviolet spectra Absorption spectra
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17561161
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.ssc.2005.11.027 
https://dx.doi.org/10.1016/j.ssc.2005.11.027
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