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SiOx films prepared using RF magnetron sputtering with a SiO target

Author
MIYAZAKI, H1 ; GOTO, T2
[1] Department of Material Science, Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060, Nishikawatsu-cho, Matsue, Shimane 690-8504, Japan
[2] Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai, Miyagi, 980-8577, Japan
Source

Journal of non-crystalline solids. 2006, Vol 352, Num 4, pp 329-333, 5 p ; ref : 25 ref

CODEN
JNCSBJ
ISSN
0022-3093
Scientific domain
Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
42.79.Wc 52.40.Hf 81.15.Cd Sputtering Absorption Defects Optical spectroscopy STEM/TEM Silica
Keyword (fr)
Coefficient absorption Couche mince Diffraction RX Frittage Microscopie électronique transmission Pulvérisation cathodique Pulvérisation haute fréquence Radiofréquence Silicium oxyde Spectre IR Spectre absorption Spectre photoélectron RX Stoechiométrie 8115C SiOx
Keyword (en)
Absorption coefficients Thin films XRD Sintering Transmission electron microscopy Cathode sputtering Radiofrequency sputtering Radiofrequency Silicon oxides Infrared spectra Absorption spectra X-ray photoelectron spectra Stoichiometry
Keyword (es)
Pulverización alta frecuencia Radiofrecuencia
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17572921

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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