Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography
- Author
- TONGDA MA1 2 ; HAILING TU1 ; GUANGYONG HU2 ; BELLING SHAO2 ; ANSHENG LIU2
[1] National Engineering Research Center for Semiconductor Materials, General Research Institute for Non-ferrous Metals, No. 2 Xinjiekouwai Street, Beijing 100088, China
[2] National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials, General Research Institute for Nonferrous Metals, No. 2 Xinjiekouwai Street, Beijing 100088, China - Source
Journal of crystal growth. 2006, Vol 289, Num 2, pp 489-493, 5 p ; ref : 19 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 61.10.Nz 61.72.Ff 68.35.Fx 68.55.Jk 68.65.Ac 81.15.Gh Al. Crystal structure A3. Chemical vapor deposition processes Al. Diffusion Al. High resolution X-ray diffraction Al. X-ray topography Bl. Germanium silicon alloys
- Keyword (fr)
- Alignement Asymétrie Composé binaire Composé minéral Contrainte traction Couche tampon Cristallisation Diffraction RX Diffusion Dépôt chimique phase vapeur Etude expérimentale Hétérostructure Rayonnement synchrotron Semiconducteur Silicium Germaniure Silicium Technologie silicium sur isolant Topographie RX Ge Si Si SiGe
- Keyword (en)
- Alignment Asymmetry Binary compounds Inorganic compounds Tensile stress Buffer layer Crystallization XRD Scattering CVD Experimental study Heterostructures Synchrotron radiation Semiconductor materials Silicon Germanides Silicon Silicon-on-insulator X-ray topography
- Keyword (es)
- Tensión traccíon Capa tampón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17602933
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2005.12.102 
https://dx.doi.org/10.1016/j.jcrysgro.2005.12.102
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