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The scattering approach : Application to the conductance of silicon nanograins

Author
MAZZONE, A. M1 ; MORANDI, V1
[1] C.N.R.-IMM, Sezione di Bologna- Via Gobetti, 101, 40129-Bologna, Italy
Source

Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 2, pp 204-208, 5 p ; ref : 19 ref

ISSN
1386-9477
Scientific domain
Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
31.15.Ne 73.36.-6 Silicon nanograins Extended Huckel theory Transport properties
Keyword (fr)
Conductivité électrique Grosseur grain Hamiltonien Méthode Hückel généralisée Méthode calcul Nanomatériau Nanostructure Phénomène transport Population niveau énergie Silicium Structure basaltique Structure sandwich Structure électronique Théorie diffusion 7363 Si
Keyword (en)
Electrical conductivity Grain size Hamiltonians Extended Hueckel method Calculation methods Nanostructured materials Nanostructures Transport processes Energy level population Silicon Columnar structure Sandwich structures Electronic structure Scattering theory
Keyword (es)
Método Huckel generalizado Población nivel energía Estructura columnar
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C63 Electronic transport in multilayers, nanoscale materials and structures

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17667343

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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