The scattering approach : Application to the conductance of silicon nanograins
- Author
- MAZZONE, A. M1 ; MORANDI, V1
[1] C.N.R.-IMM, Sezione di Bologna- Via Gobetti, 101, 40129-Bologna, Italy - Source
Physica. E, low-dimentional systems and nanostructures. 2006, Vol 31, Num 2, pp 204-208, 5 p ; ref : 19 ref
- ISSN
- 1386-9477
- Scientific domain
- Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 31.15.Ne 73.36.-6 Silicon nanograins Extended Huckel theory Transport properties
- Keyword (fr)
- Conductivité électrique Grosseur grain Hamiltonien Méthode Hückel généralisée Méthode calcul Nanomatériau Nanostructure Phénomène transport Population niveau énergie Silicium Structure basaltique Structure sandwich Structure électronique Théorie diffusion 7363 Si
- Keyword (en)
- Electrical conductivity Grain size Hamiltonians Extended Hueckel method Calculation methods Nanostructured materials Nanostructures Transport processes Energy level population Silicon Columnar structure Sandwich structures Electronic structure Scattering theory
- Keyword (es)
- Método Huckel generalizado Población nivel energía Estructura columnar
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C63 Electronic transport in multilayers, nanoscale materials and structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17667343
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physe.2005.12.158 
https://dx.doi.org/10.1016/j.physe.2005.12.158
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