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High-resolution DLTS of vacancy-donor pairs in P-, As- and Sb-doped silicon

Author
AURET, F. D1 2 ; PEAKER, A. R2 ; MARKEVICH, V. P2 3 ; DOBACZEWSKI, L4 ; GWILLIAM, R. M5
[1] Physics Department, University of Pretoria, Pretoria 0002, South Africa
[2] Centre for Electronic Materials Devices and Nanostructures, School of Electrical and Electronic Engineering, Sackville Street Building, University of Manchester, P.O. Box 88, Manchester M601QD, United Kingdom
[3] Institute of Solid State and Semiconductor Physics, Minsk, Belarus
[4] Institute of Physics, Warsaw, Poland
[5] Ion Beam Centre, University of Surrey, GU2 7XH, United Kingdom
Conference title
Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23, Awaji Island, Japan, 27-29 July 2005
Conference name
ICDS : international conference on defects in semiconductors (23 ; Awaji Island 2005-07-24)
Author (monograph)
OSHIYAMA, A (Editor)1 ; MAEDA, K (Editor)2 ; ITOH, K. M (Editor)3 ; KATAYAMA-YOSHIDA, H (Editor)4
[1] University of Tsukuba, Japan
[2] University of Tokyo, Japan
[3] Keio University, Japan
[4] Osaka University, Japan
Source

Physica. B, Condensed matter. 2006, Vol 376-77, pp 73-76, 4 p ; ref : 6 ref

ISSN
0921-4526
Scientific domain
Crystallography; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
E-centers Electron irradiation Laplace (high-resolution) DLTS Silicon
Keyword (fr)
Centre accepteur Centre donneur DLTS Effet rayonnement Emission électronique Energie activation Etat défaut Lacune Silicium Structure électronique 7155C Si
Keyword (en)
Acceptor center Donor center DLTS Radiation effects Electron emission Activation energy Defect states Vacancies Silicon Electronic structure
Keyword (es)
Centro aceptor Centro dador
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17685324

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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