Si ion-induced instability in flatband voltage of Si+-implanted gate oxides
- Author
- NG, C. Y1 ; CHEN, T. P1 ; DING, L1 ; CHEN, Q1 ; LIU, Y1 ; ZHAO, P1 ; TSENG, Ampere A2 ; FUNG, S3
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
[2] Center for Solid State Electronics, Arizona State University, Tempe, AZ 85287, United States
[3] Department of Physics, The University of Hong Kong, Hong-Kong - Source
I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 5, pp 1280-1282, 3 p ; ref : 12 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Annealing flatband voltage low energy ion beam silicon nanocrystal (nc-Si)
- Keyword (fr)
- Electronique faible puissance Fabrication microélectronique Faisceau ionique Grille transistor Implantation ion Nanocristal Oxyde grille Recuit thermique Température recuit Tension bande plate Tension grille
- Keyword (en)
- Low-power electronics Microelectronic fabrication Ion beam Transistor gate Ion implantation Nanocrystal Gate oxide Thermal annealing Annealing temperature Flat band voltage Gate voltage
- Keyword (es)
- Fabricación microeléctrica Haz iónico Rejilla transistor Implantación ión Nanocristal Oxido rejilla Recocido térmico Temperatura recocido Voltaje banda llana
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17749244
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2006.871841 
https://dx.doi.org/10.1109/TED.2006.871841
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