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Pattern replication of 100 nm to millimeter-scale features by thermal nanoimprint lithography

Author
BO CUI1 ; VERES, Teodor1
[1] Industrial Materials Institute, National Research Council of Canada, 75 de Mortagne Boulevard, Boucherville, QC J4B6 Y4, Canada
Conference title
Proceedings of the 31st International Conference on Micro- and Nano-Engineering: 19-22 September 2005, Vienna, Austria
Conference name
MNE 2005 International Conference on Micro- and Nano-Engineering (31 ; Vienna 2005-09-19)
Author (monograph)
LOESCHNER, Hans (Editor)1
[1] IMS Nanofabrication Vienna, Austria
Source

Microelectronic engineering. 2006, Vol 83, Num 4-9, pp 902-905, 4 p ; ref : 10 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Hot embossing Liftoff Pattern replication Polymer viscosity Thermal nanoimprint lithography
Keyword (fr)
A chaud Décollement épitaxique Fabrication microélectronique Formation motif Gravure ionique réactive Largeur raie Nanolithographie Polymère Réplication Résist
Keyword (en)
Hot process Lift off Microelectronic fabrication Patterning Reactive ion etching Line width Nanolithography Polymer Replication Resist
Keyword (es)
En caliente Desprendimiento epitáxico Fabricación microeléctrica Formacíon motivo Grabado iónico reactivo Anchura raya espectral Polímero Replicación Resistencia
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17773422

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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