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Interband transitions and electronic properties of InAs/GaAs quantum dots embedded in AlxGa1-xAs/GaAs modulation-doped heterostructures

Author
IM, H. C1 ; KIM, J. H1 ; OH, D. H1 ; KIM, T. W1 ; YOO, K. H2 ; KIM, M. D3
[1] Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea, Republic of
[2] Department of Physics, Kyung Hee University, Seoul 130-701, Korea, Republic of
[3] Department of Physics, Chungnam National University, 220 Gung-dong, Yuseong-gu, Daejeon 305-764, Korea, Republic of
Source

Applied surface science. 2006, Vol 252, Num 12, pp 4146-4153, 8 p ; ref : 20 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Activation energy InAs/GaAs quantum dot Interband transition
Keyword (fr)
Aluminium arséniure Autocohérence Composé binaire Composé ternaire Dopage modulé Dépendance température Dépendance énergie Energie activation Exciton Fermion lourd Fonction onde Gallium arséniure Hétérostructure Indium arséniure Microscopie force atomique Microscopie électronique transmission Photoluminescence Point quantique RHEED Réseau(arrangement) Semiconducteur Sous bande Transition interbande Al As Ga Al0,3Ga0,7As As Ga As In GaAs InAs Composé minéral
Keyword (en)
Aluminium arsenides Self consistency Binary compounds Ternary compounds Modulation doping Temperature dependence Energy dependence Activation energy Excitons Heavy fermions Wave functions Gallium arsenides Heterostructures Indium arsenides Atomic force microscopy Transmission electron microscopy Photoluminescence Quantum dots RHEED Arrays Semiconductor materials Subband Interband transitions Inorganic compounds
Keyword (es)
Autocoherencia Doping modulado Subbanda
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems / 001B70C21L Quantum dots

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence

Pacs
7321L Quantum dots

Pacs
7855 Photoluminescence

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17779057

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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