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Red lasers grown by all-solid-source molecular beam epitaxy

Author
SAVOLAINEN, P1 ; TOIVONEN, M1 ; PESSA, M1 ; CORVINI, P2 ; JANSEN, M2 ; NABIEV, R. F2
[1] Department of Physics, Tampere University of Technology, PO Box 692, 3310 Tampere, Finland
[2] Coherent Semiconductor Group, 5100 Patrick Henry Drive, Santa Clara, CA 95054, United States
Source

Semiconductor science and technology. 1999, Vol 14, Num 5, pp 425-429 ; ref : 25 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Condensation faisceau moléculaire Epitaxie Etude expérimentale Faisceau moléculaire Laser injection Mécanisme croissance Méthode état solide Puits quantique
Keyword (en)
Molecular beam condensation Epitaxy Experimental study Molecular beams Injection laser Growth mechanism Growth from solid state Quantum wells
Keyword (es)
Condensación haz molecular Laser inyección Mecanismo crecimiento Método estado sólido
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics : optics Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1781329

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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