SOI technology for radio-frequency integrated-circuit applications
- Author
- RONG YANG1 ; HE QIAN1 ; JUNFENG LI1 ; QIUXIA XU1 ; CHAOHE HAI1 ; ZHENGSHENG HAN1
[1] Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China - Source
I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 6, pp 1310-1316, 7 p ; ref : 31 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Body contact high-resistivity substrate lightly doped drain (LDD) MOSFET locally thickened oxide power MOSFET salicide silicon-on-insulator (SOI) technology spiral inductor ultrathick aluminum
- Keyword (fr)
- Bobine inductance Circuit intégré radiofréquence Circuit intégré Corps flottant Disruption électrique Drain peu dopé Evaluation performance Facteur qualité Fréquence coupure Fréquence oscillation Fréquence résonance Radiofréquence Résistance série Technologie MOS complémentaire Technologie NMOS Technologie autoalignée Technologie silicium sur isolant Tension amorçage Transconductance Transistor MOSFET Transistor puissance
- Keyword (en)
- Inductor Radiofrequency integrated circuits Integrated circuit Floating body Electric breakdown Lightly doped drain Performance evaluation Q factor Cut off frequency Oscillation frequency Resonance frequency Radiofrequency Series resistance Complementary MOS technology NMOS technology Self aligned technology Silicon on insulator technology Breakdown voltage Transconductance MOSFET Power transistor
- Keyword (es)
- Inductor Circuito integrado Cuerpo flotante Disrupción eléctrica Dren poco dopado Evaluación prestación Factor calidad Frecuencia corte Frecuencia oscilación Frecuencia resonancia Radiofrecuencia Resistencia en serie Tecnología MOS complementario Tecnología NMOS Tecnología rejilla autoalineada Tecnología silicio sobre aislante Voltaje perforación Transconductancia Transistor potencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F05 Other multijunction devices. Power transistors. Thyristors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F10 Magnetic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17843295
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2006.874240 
https://dx.doi.org/10.1109/TED.2006.874240
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