An accurate small-signal model for AlGaN-GaN HEMT suitable for scalable large-signal model construction
- Author
- JARNDAL, Anwar1 ; KOMPA, Günter1
[1] Fachgebiet Hochfrequenztechnik, University of Kassel, Kassel 34121, Germany - Source
IEEE microwave and wireless components letters. 2006, Vol 16, Num 6, pp 333-335, 3 p ; ref : 6 ref
- ISSN
- 1531-1309
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- GaN high electron mobility transistor (HEMT) high power devices small-signal model
- Keyword (fr)
- Extraction paramètre Modélisation Régime signal faible Régime signal fort Transistor mobilité électron élevée
- Keyword (en)
- Parameter extraction Modeling Small signal behavior Large signal behavior High electron mobility transistor
- Keyword (es)
- Extracción parámetro Modelización Régimen señal débil Régimen señal fuerte Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17860967
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LMWC.2006.875626 
https://dx.doi.org/10.1109/LMWC.2006.875626
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