Scanning tunneling microscopy study on initial stage of atomic hydrogen adsorption on the Si(111) 7×7 surface
- Author
- FUKUDA, T1 ; NAKATANI, J1 ; NAKAYAMA, H1
[1] Department of Physical Electronics and Informatics, Graduate School of Engineering, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi-Ku, Osaka 558-8585, Japan - Source
Surface science. 2006, Vol 600, Num 12, pp 2443-2448, 6 p ; ref : 27 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Chemisorption Hydrogen atom Scanning tunneling microscopy Silicon Single crystal surfaces
- Keyword (fr)
- Chimisorption Hydrogène Microscopie tunnel balayage Monocristal Silicium H Si
- Keyword (en)
- Chemisorption Hydrogen Scanning tunneling microscopy Monocrystals Silicon
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17878210
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.susc.2006.03.035 
https://dx.doi.org/10.1016/j.susc.2006.03.035
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