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Initial study on the structure and optical properties of ZnO film on Si(111) substrate with a SiC buffer layer

Author
SHA, Z. D1 2 ; WANG, J1 2 ; CHEN, Z. C1 2 ; CHEN, A. J1 2 ; ZHOU, Z. Y1 2 ; WU, X. M1 2 ; ZHUGE, L. J2 3
[1] Department of Physics, Suzhou University, Suzhou 215006, China
[2] The Key Laboratory of Thin Films of Jiangsu, Suzhou University, Suzhou 215006, China
[3] Analysis and Testing Center, Suzhou University, Suzhou 215006, China
Source

Physica. E, low-dimentional systems and nanostructures. 2006, Vol 33, Num 1, pp 263-267, 5 p ; ref : 22 ref

ISSN
1386-9477
Scientific domain
Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
78.40.-q 78.55.-m 78.66.-w 78.68.+m A SiC buffer layer Annealing temperature Photoluminescence Structure ZnO films
Keyword (fr)
Accommodation réseau Couche mince Diffraction RX Exciton Photoluminescence Piégeage porteur charge Propriété optique Pulvérisation cathodique Pulvérisation haute fréquence Recuit Spectre IR Spectre transformée Fourier Zinc oxyde 7866L ZnO
Keyword (en)
Mismatch lattice Thin films XRD Excitons Photoluminescence Charge carrier trapping Optical properties Cathode sputtering Radiofrequency sputtering Annealing Infrared spectra Fourier transform spectra Zinc oxides
Keyword (es)
Acomodación red Captura portador carga Pulverización alta frecuencia
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66L Other semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
17892164

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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